用量子核方法在小数据下预测半导体接触电阻，效果优于传统模型。

Modeling complex semiconductor fabrication processes such as Ohmic contact formation remains challenging due to high-dimensional parameter spaces and limited experimental data. While classical machine learning (CML) approaches have been successful in many domains, their performance degrades in small-sample, nonlinear scenarios. In this work, we investigate quantum machine learning (QML) as an alternative, exploiting quantum kernels to capture intricate correlations from compact datasets. Using only 159 experimental GaN HEMT samples, we develop a quantum kernel-aligned regressor (QKAR) combining a shallow Pauli-Z feature map with a trainable quantum kernel alignment (QKA) layer. All models, including seven baseline CML regressors, are evaluated under a unified PCA-based preprocessing pipeline to ensure a fair comparison. QKAR consistently outperforms classical baselines across multiple metrics (MAE, MSE, RMSE), achieving a mean absolute error of 0.338 Omega mm when validated on experimental data. We further assess noise robustness and generalization through cross-validation and new device fabrication. These findings suggest that carefully constructed QML models could provide predictive advantages in data-constrained semiconductor modeling, offering a foundation for practical deployment on near-term quantum hardware. While challenges remain for both QML and CML, this study demonstrates QML's potential as a complementary approach in complex process modeling tasks.