用GPU加速逆光刻技术，生成更精准的弯曲掩模图
GPU-Accelerated Inverse Lithography Towards High Quality Curvy Mask Generation
- 基于GPU加速的逆光刻算法，优化弯曲掩模轮廓
- 在开放基准上相比主流学术引擎显著提升图形质量与工艺窗口
- 适合需要高精度弯曲掩模的先进制程芯片设计团队
逆光刻技术（ILT）已成为光掩模设计与优化的有前景方案。依赖多束电子束掩模写入机，ILT可生成自由形态的曲线掩模结构，从而提升晶圆图形质量和工艺窗口。然而，将曲线型ILT应用于大规模生产的一大挑战是掩模规则检查，目前仍由代工厂和EDA厂商开发中。尽管近期研究已将掩模复杂度纳入优化过程，但多数聚焦于减少电子束曝光次数，这与曲线型ILT的目标不符。本文提出一种GPU加速的逆光刻算法，在提升轮廓质量与工艺窗口的同时，也增强了曲线掩模形状的精度。在公开基准上的实验表明，该算法在性能上显著优于主流学术级ILT引擎。
原文摘要 · Abstract (English)
Inverse Lithography Technology (ILT) has emerged as a promising solution for photo mask design and optimization. Relying on multi-beam mask writers, ILT enables the creation of free-form curvilinear mask shapes that enhance printed wafer image quality and process window. However, a major challenge in implementing curvilinear ILT for large-scale production is mask rule checking, an area currently under development by foundries and EDA vendors. Although recent research has incorporated mask complexity into the optimization process, much of it focuses on reducing e-beam shots, which does not align with the goals of curvilinear ILT. In this paper, we introduce a GPU-accelerated ILT algorithm that improves not only contour quality and process window but also the precision of curvilinear mask shapes. Our experiments on open benchmarks demonstrate a significant advantage of our algorithm over leading academic ILT engines.
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