用预训练语言模型直接从文字描述预测半导体带隙，准确率达0.25eV以内。

We investigate transformer-based language models, including RoBERTa, T5, Llama-3, and MatSciBERT, for predicting the band gaps of semiconductor materials directly from textual descriptions. The inputs encode key material features, such as chemical composition, crystal system, space group, and other structural and electronic properties. Unlike shallow machine learning models, which require extensive feature engineering, or Graph Neural Networks, which rely on graph representations derived from atomic coordinates, pretrained language models can process textual inputs directly, eliminating the need for manual feature preprocessing or structure-based encoding. Material descriptions were constructed in two formats: structured strings with a consistent template and natural language narratives generated via the ChatGPT API. Each model was augmented with a custom regression head and finetuned for band gap prediction task. Language models of different architectures and parameter sizes were all able to predict band gaps from human-readable text with strong accuracy, achieving MAEs in the range of 0.25-0.33 eV, highlighting the success of this approach for scientific regression tasks. Finetuned Llama-3, with 1.2 billion parameters, achieved the highest accuracy (MAE 0.248 eV, R2 0.891). MatSciBERT, pretrained on materials science literature, reached comparable performance (MAE 0.288 eV, R2 0.871) with significantly fewer parameters (110 million), emphasizing the importance of domain-specific pretraining. Attention analysis shows that both models selectively focus on compositional and spin-related features while de-emphasizing geometric features, reflecting the difficulty of capturing spatial information from text. These results establish that pretrained language models can effectively extract complex feature-property relationships from textual material descriptions.