28nm AI芯片用4位/单元闪存，零待机功耗，适合低功耗边缘智能。
A 28 nm AI microcontroller with tightly coupled zero-standby power weight memory featuring standard logic compatible 4 Mb 4-bits/cell embedded flash technology
- 4位/单元嵌入式闪存与近内存计算单元紧耦合。
- 160小时125℃断电烘焙后仍保持精度，可靠性高。
- 适合电池供电的低成本边缘AI设备使用。
本研究提出一种面向成本效益、电池供电边缘AI应用的新型AI微控制器。不同于传统的单比特/单元存储配置，该微控制器集成了零待机功耗的权重存储器，采用与标准逻辑兼容的4位/单元嵌入式闪存技术，并与近内存计算单元紧密耦合，实现高效低功耗的AI加速。通过先进的状态映射和无过应力字线驱动电路，扩展了验证层级，确保16状态单元的可靠裕量。乒乓缓冲区减少了内部数据移动，支持同时多比特处理。所制备的微控制器在125℃下断电烘焙160小时后仍保持精度，展现出高可靠性。
原文摘要 · Abstract (English)
This study introduces a novel AI microcontroller optimized for cost-effective, battery-powered edge AI applications. Unlike traditional single bit/cell memory configurations, the proposed microcontroller integrates zero-standby power weight memory featuring standard logic compatible 4-bits/cell embedded flash technology tightly coupled to a Near-Memory Computing Unit. This architecture enables efficient and low-power AI acceleration. Advanced state mapping and an overstress-free word line (WL) driver circuit extend verify levels, ensuring robust 16 state cell margin. A ping-pong buffer reduces internal data movement while supporting simultaneous multi-bit processing. The fabricated microcontroller demonstrated high reliability, maintaining accuracy after 160 hours of unpowered baking at 125$^\circ$C.
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