用机器学习自动分析纳米器件中的随机电报噪声信号,无需先验知识。
RTNinja: A generalized machine learning framework for analyzing random telegraph noise signals in nanoelectronic devices
- 基于贝叶斯推断与概率聚类,全自动分离复杂噪声信号中的隐含源
- 在7000组模拟数据上实现高保真信号重建和源幅值、行为模式准确提取
- 适用于大规模可靠性评估与下一代纳米电子器件物理研究
随机电报噪声是纳米电子器件中普遍存在的参数波动现象,源于缺陷位点的载流子随机交换,严重影响器件可靠性和性能。传统分析方法常依赖限制性假设或人工干预,难以处理复杂噪声数据。本文提出RTNinja,一种通用、完全自动化的机器学习框架,用于无监督分析随机电报噪声信号。该框架通过两个模块实现:LevelsExtractor利用贝叶斯推断与模型选择进行去噪与离散化;SourcesMapper通过概率聚类与优化推断源配置。为评估性能,我们构建蒙特卡洛仿真器生成涵盖广泛信噪比与源复杂度的带标签数据集;在7000组数据上,RTNinja均实现高保真信号重构,并准确提取源幅值与活动模式。结果表明,RTNinja是一种鲁棒、可扩展、设备无关的随机电报噪声表征工具,可用于大规模统计基准测试、以可靠性为核心的工艺认证、预测性失效建模及下一代纳米电子器件物理探索。
原文摘要 · Abstract (English)
Random telegraph noise is a prevalent variability phenomenon in nanoelectronic devices, arising from stochastic carrier exchange at defect sites and critically impacting device reliability and performance. Conventional analysis techniques often rely on restrictive assumptions or manual interventions, limiting their applicability to complex, noisy datasets. Here, we introduce RTNinja, a generalized, fully automated machine learning framework for the unsupervised analysis of random telegraph noise signals. RTNinja deconvolves complex signals to identify the number and characteristics of hidden individual sources without requiring prior knowledge of the system. The framework comprises two modular components: LevelsExtractor, which uses Bayesian inference and model selection to denoise and discretize the signal, and SourcesMapper, which infers source configurations through probabilistic clustering and optimization. To evaluate performance, we developed a Monte Carlo simulator that generates labeled datasets spanning broad signal-to-noise ratios and source complexities; across 7000 such datasets, RTNinja consistently demonstrated high-fidelity signal reconstruction and accurate extraction of source amplitudes and activity patterns. Our results demonstrate that RTNinja offers a robust, scalable, and device-agnostic tool for random telegraph noise characterization, enabling large-scale statistical benchmarking, reliability-centric technology qualification, predictive failure modeling, and device physics exploration in next-generation nanoelectronics.
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