用骨架图分析锗表面微结构形貌，发现辐照角度影响更大
Morphological Analysis of Semiconductor Microstructures using Skeleton Graphs
- 将电子显微图像转为骨架图，用图卷积网络提取特征
- 主成分分析显示辐照角度变化对形貌影响大于辐照通量
- 适合材料形貌分析与离子束加工优化的研究者
本文处理了离子束辐照锗表面形成的微结构电子显微图像，提取其拓扑特征构建骨架图，并通过图卷积网络进行嵌入。对所得嵌入结果进行主成分分析，利用Davies-Bouldin指数评估主成分空间中的聚类可分性。结果表明，辐照角度的变化对锗表面形貌特性的影响，显著大于辐照通量变化的影响。
原文摘要 · Abstract (English)
In this paper, electron microscopy images of microstructures formed on Ge surfaces by ion beam irradiation were processed to extract topological features as skeleton graphs, which were then embedded using a graph convolutional network. The resulting embeddings were analyzed using principal component analysis, and cluster separability in the resulting PCA space was evaluated using the Davies-Bouldin index. The results indicate that variations in irradiation angle have a more significant impact on the morphological properties of Ge surfaces than variations in irradiation fluence.
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