通过三维相位重建,精准获取硅量子点中自旋交换作用的电压依赖关系。
3D tomography of exchange phase in a Si/SiGe quantum dot device
- 融合全息测量与最大流最小割算法,实现3D电压空间的相位解缠。
- 在实验中成功识别出交换相位为π的低梯度控制点,提升量子比特操控精度。
- 方法对器件漂移不敏感,适用于量子芯片的校准与性能优化。
交换相互作用是自旋量子处理器运行的基础。准确提取交换系数 $J(oldsymbol{V})$ 随栅极电压的变化,对理解器件无序性、精确模拟性能以及实现高保真度自旋量子比特操作至关重要。传统相干测量仅能获得交换作用累积相位的余弦调制信号,其反演存在相位模糊、解缠噪声敏感及积分逆问题等挑战。本文针对前两个难点,成功重建了累积相位 $ϕ(oldsymbol{V})$。通过借鉴数字全息技术中的相位调制方法,并结合最大流最小割相位解缠算法(PUMA),从一系列二维测量中构建出三维相位体积。该方法对器件中观测到的最小漂移具有鲁棒性,经扫描分辨率提升验证。基于重建的相位模型,进一步优化以定位电压空间中梯度最小的π交换脉冲点。本测量协议可为理解器件变异性的来源提供细节信息,支持运行时对特定器件进行模型校准,实现更精细的误差归因,并推动量子比特控制的系统性优化。所提方法有望推广至其他量子比特平台。
原文摘要 · Abstract (English)
The exchange interaction is a foundational building block for the operation of spin-based quantum processors. Extracting the exchange interaction coefficient $J(\mathbf{V})$, as a function of gate electrode voltages, is important for understanding disorder, faithfully simulating device performance, and operating spin qubits with high fidelity. Typical coherent measurements of exchange in spin qubit devices yield a modulated cosine of an accumulated phase, which in turn is the time integral of exchange. As such, extracting $J(\mathbf{V})$ from experimental data is difficult due to the ambiguity of inverting a cosine, the sensitivity to noise when unwrapping phase, as well as the problem of inverting the integral. As a step toward obtaining $J(\mathbf{V})$, we tackle the first two challenges to reveal the accumulated phase, $ϕ(\mathbf{V})$. We incorporate techniques from a wide range of fields to robustly extract and model a 3D phase volume for spin qubit devices from a sequence of 2D measurements. In particular, we present a measurement technique to obtain the wrapped phase, as done in phase-shifting digital holography, and utilize the max-flow/min-cut phase unwrapping method (PUMA) to unwrap the phase in 3D voltage space. We show this method is robust to the minimal observed drift in the device, which we confirm by increasing scan resolution. Upon building a model of the extracted phase, we optimize over the model to locate a minimal-gradient $π$ exchange pulse point in voltage space. Our measurement protocol may provide detailed information useful for understanding the origins of device variability governing device yield, enable calibrating device models to specific devices during operation for more sophisticated error attribution, and enable a systematic optimization of qubit control. We anticipate that the methods presented here may be applicable to other qubit platforms.
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