综述毫米波与太赫兹振荡器最新进展，助力6G通信与计算。
Recent Advances in mm-Wave and Sub-THz/THz Oscillators for FutureG Technologies
- 对比CMOS/SiGe/III-V半导体技术在振荡器中的应用表现。
- 重点分析相位噪声、输出功率和能效等关键性能指标。
- 为未来通信与传感系统提供设计参考，适合芯片研发人员。
本文系统回顾了面向下一代计算与通信系统（包括5G、6G及更远）的毫米波（<100 GHz）与亚太赫兹/太赫兹（>100 GHz）振荡器的最新进展。综合评估了基于CMOS、SiGe及III-V族半导体技术的设计方法，重点关注相位噪声、输出功率、能效、频率可调性与稳定性等性能指标。文章揭示了实现高性能、高可靠性振荡器设计的关键挑战，并探讨了新兴的性能提升技术。通过分析近期设计趋势，本工作旨在为未来通信、计算与传感应用中稳健的毫米波与亚太赫兹/太赫兹振荡器开发提供有价值的见解与设计指导。
原文摘要 · Abstract (English)
This paper provides a concise yet comprehensive review of recent advancements in millimeter-wave (mm-wave) oscillators below 100 GHz and sub-terahertz (sub-THz/THz) oscillators above 100 GHz for next-generation computing and communication systems, including 5G, 6G, and beyond. Various design approaches, including CMOS, SiGe, and III-V semiconductor technologies, are explored in terms of performance metrics such as phase noise, output power, efficiency, frequency tunability, and stability. The review highlights key challenges in achieving high-performance and reliable oscillator designs while discussing emerging techniques for performance enhancement. By evaluating recent design trends, this work aims to offer valuable insights and design guidelines that facilitate the development of robust mm-wave and sub-THz/THz oscillators for future communication, computing, and sensing applications.
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