用灰度扩散生成多层射频无源器件，支持复杂设计约束与快速优化。
Inverse Design of Multi-Layer Sub-Pixel-Resolution RF Passives Through Grayscale Diffusion with Flexible S-Parameter Conditioning
- 基于灰度扩散与参数条件化，实现多层微米级射频器件逆向设计
- 生成结果在1-20 GHz频段内误差仅0.77±1.28 dB，秒级完成设计
- 适合射频芯片设计、可制造性要求高的工程团队使用
从S参数逆向设计射频无源器件是高维且病态的问题，现有生成方法仅限于单层二值金属结构。本文提出一种新方法，在8×8 mm板上以64×64像素分辨率生成多层铜布局（含过孔），支持亚像素灰度金属化，覆盖1-20 GHz频段。通过退火朗之万投影施加严格的馈电位置物理约束，灵活结合部分S参数、端口位置、介质属性、参考拓扑及可变端口放置等条件进行多模态条件化。候选设计可在秒级生成，代理预测的S参数与目标偏差为0.77±1.28 dB（加权平均绝对误差）。验证中成功设计出两种可制造器件：一是绕过制造规则限制的发夹滤波器替代方案；二是仅根据目标S参数从零设计的梳状带通滤波器，均在RO4003C基板上成功流片。
原文摘要 · Abstract (English)
Inverse design of RF passive components from S-parameters is a high-dimensional, ill-posed problem, and prior generative approaches are limited to single-layer binary-metallization structures. This paper presents an inverse design approach that generates passive components from partial S-parameter inputs on an $8\times8$ mm board discretized at $64\times64$ pixels with sub-pixel grayscale metallization across 1-20 GHz. The framework generates two-layer copper layouts with vias, with hard physical constraints on feed locations enforced through annealed Langevin projection, flexible multi-modal conditioning on partial S-parameter specifications, port locations, dielectric properties, reference topology, and variable port placement. Candidate designs are generated in seconds, with surrogate-predicted S-parameters matching targets to within $0.77 \pm 1.28$ dB weighted mean absolute error. We validate the approach with two fabricated designs on RO4003C: a manufacturable alternative to a hairpin filter whose coupling gaps violate fabrication rules, and a combline bandpass filter designed from scratch given only target S-parameters.
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